Title Journal Authors
"Epitaxial growth of GaN films on nearly lattice-matched hafnium substrates using a low-temperature growth technique" APL Materials 4, 076104 (2016). H. R. Kim, J. Ohta, S. Inoue, K. Ueno, A. Kobayashi, and H. Fujioka
"Fabrication of InGaN thin-film transistors using pulsed sputtering deposition" Scientific Reports 6, 29500, (2016). Takeki Itoh, Atsushi Kobayashi, Kohei Ueno, Jitsuo Ohta, and Hiroshi Fujioka
" InN thin-film transistors fabricated on polymer sheets using pulsed sputtering deposition at room temperature" Appl. Phys. Lett. 109, 032106 (2016). Khe Shin Lye, Atsushi Kobayashi, Kohei Ueno, Jitsuo Ohta, and Hiroshi Fujioka
" High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering" APL Materials 4, 086103 (2016). Yasuaki Arakawa, Kohei Ueno, Atsushi Kobayashi, Jitsuo Ohta1, and Hiroshi Fujioka
"Spatial distribution of transferred charges across the heterointerface between perovskite transition metal oxides LaNiO3 and LaMnO3" Appl. Phys. Lett. 108, 111603 (2016). M. Kitamura, K. Horiba, M. Kobayashi, E. Sakai, M. Minohara, T. Mitsuhashi, A. Fujimori, T. Nagai, H. Fujioka, and H. Kumigashira
"Epitaxial growth of In-rich InGaN on yttria-stabilized zirconia and its application to metal-insulator-semiconductor field-effect transistors" Journal of Appl. Phys. 120, 085709 (2016). Atsushi Kobayashi, Khe Shin Lye, Kohei Ueno, Jitsuo Ohta, and Hiroshi Fujioka
"High-current-density indium nitride ultrathin-film transistors on glass substrates" Appl. Phys. Lett. 109, 142104 (2016). Takeki Itoh, Atsushi Kobayash, Jitsuo Ohta, and Hiroshi Fujioka
"Electrical properties of Si-doped GaN prepared using pulsed sputtering" Appl. Phys. Lett. 110, 042103 (2017). Y. Arakawa, K. Ueno, H. Imabeppu, A. Kobayashi, J. Ohta, and H. Fujioka
"Low-temperature pulsed sputtering growth of thick InGaN multiple quantum wells" Jpn. J. Appl. Phys. 56, 031002 (2017). Y. Arakawa, K. Ueno, H. Noguchi, J. Ohta, and H. Fujioka
"N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering" APL Mater. 5, 026102 (2017). K. Ueno, E. Kishikawa, J. Ohta, and H. Fujioka
"Fabrication of full-color GaN-based light-emitting diodes on nearly lattice-matched flexible metal foils" Scientific Reports, 7, 2112 (2017) H.-R. Kim, J. Ohta, K. Ueno, A. Kobayashi, M. Morita, Y. Tokumoto, and H. Fujioka
"Characterization of GaN films on hafnium foils by pulsed sputtering deposition" Phys. Status Solidi A, 1700244 (2017). H.-R. Kim, J. Ohta, K. Ueno, A. Kobayashi, Y. Tokumoto, and H. Fujioka
" Epitaxial growth of semipolar InAlN films on yttria-stabilized zirconia" Phys. Status Solidi B, 1700211 (2017). M.Oseki, A. Kobayashi, J. Ohta, M. Oshima, and H. Fujioka
" Sputter synthesis of wafer-scale hexagonal boron nitride films via interface segregation" APL materials 5, 076107 (2017). J. Ohta and H. Fujioka
"Pulsed sputtering epitaxial growth of m-plane InGaN lattice-matched to ZnO" Acceped for press in Scientific reports A. Kobayashi, J. Ohta, and H. Fujioka
" Pulsed sputtering epitaxial growth of thick polar and semipolar InN films on yttria-stabilized zirconia" Accepted for press in Phys. Status Solidi B M.Oseki, A. Kobayashi, J. Ohta, M. Oshima, and H. Fujioka
"Highly conductive Ge-doped GaN epitaxial layers prepared by pulsed sputtering" Accepted for press in APEX Kohei Ueno, Yasuaki Arakawa, Atsushi Kobayashi, Jitsuo Ohta, and Hiroshi Fujioka

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