2017年

1. Highly conductive Ge-doped GaN epitaxial layers prepared by pulsed sputtering
   Kohei Ueno, Yasuaki Arakawa, Atsushi Kobayashi, Jitsuo Ohta, and Hiroshi Fujioka
   Applied Physics Express 10, 101002 (2017).
2. Pulsed sputtering epitaxial growth of thick polar and semipolar InN films on yttria-stabilized zirconia
   M.Oseki, A. Kobayashi, J. Ohta, M. Oshima, and H. Fujioka
   Accepted for press in Phys. Status Solidi B
3. Pulsed sputtering epitaxial growth of m-plane InGaN lattice-matched to ZnO
   Scientific Reports, 7, 12820 (2017). A. Kobayashi, J. Ohta, and H. Fujioka
   
4. Sputter synthesis of wafer-scale hexagonal boron nitride films via interface segregation
   J. Ohta and H. Fujioka
   APL materials 5, 076107 (2017).
5. Epitaxial growth of semipolar InAlN films on yttria-stabilized zirconia
   M.Oseki, A. Kobayashi, J. Ohta, M. Oshima, and H. Fujioka
   Phys. Status Solidi B, 1700211 (2017).
6. Characterization of GaN films on hafnium foils by pulsed sputtering deposition
   H.-R. Kim, J. Ohta, K. Ueno, A. Kobayashi, Y. Tokumoto, and H. Fujioka
   Phys. Status Solidi A, 1700244 (2017).
7. Fabrication of full-color GaN-based light-emitting diodes on nearly lattice-matched flexible metal foils
   H.-R. Kim, J. Ohta, K. Ueno, A. Kobayashi, M. Morita, Y. Tokumoto, and H. Fujioka
   Scientific Reports, 7, 2112 (2017).
8. N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering
   K. Ueno, E. Kishikawa, J. Ohta, and H. Fujioka
   APL Mater. 5, 026102 (2017).
9. Low-temperature pulsed sputtering growth of thick InGaN multiple quantum wells
   Y. Arakawa, K. Ueno, H. Noguchi, J. Ohta, and H. Fujioka
   Jpn. J. Appl. Phys. 56, 031002 (2017).
10. Electrical properties of Si-doped GaN prepared using pulsed sputtering
    Y. Arakawa, K. Ueno, H. Imabeppu, A. Kobayashi, J. Ohta, and H. Fujioka
    Appl. Phys. Lett. 110, 042103 (2017).

 

2016年

1. Epitaxial growth of GaN films on nearly lattice-matched hafnium substrates using a low-temperature growth technique
   H. R. Kim, J. Ohta, S. Inoue, K. Ueno, A. Kobayashi, and H. Fujioka
   APL Materials 4, 076104 (2016).
2. High-current-density indium nitride ultrathin-film transistors on glass substrates
   Takeki Itoh, Atsushi Kobayash, Jitsuo Ohta, and Hiroshi Fujioka
   Appl. Phys. Lett. 109, 142104 (2016).
3. Epitaxial growth of In-rich InGaN on yttria-stabilized zirconia and its application to metal-insulator-semiconductor field-effect transistors
   Atsushi Kobayashi, Khe Shin Lye, Kohei Ueno, Jitsuo Ohta, and Hiroshi Fujioka
   Journal of Appl. Phys. 120, 085709 (2016).
4. Spatial distribution of transferred charges across the heterointerface between perovskite transition metal oxides LaNiO3 and LaMnO3
   M. Kitamura, K. Horiba, M. Kobayashi, E. Sakai, M. Minohara, T. Mitsuhashi, A. Fujimori, T. Nagai, H. Fujioka, and H. Kumigashira
   Appl. Phys. Lett. 108, 111603 (2016).
5. High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering
   Yasuaki Arakawa, Kohei Ueno, Atsushi Kobayashi, Jitsuo Ohta1, and Hiroshi Fujioka
   APL Materials 4, 086103 (2016).
6. InN thin-film transistors fabricated on polymer sheets using pulsed sputtering deposition at room temperature
   Khe Shin Lye, Atsushi Kobayashi, Kohei Ueno, Jitsuo Ohta, and Hiroshi Fujioka
   Appl. Phys. Lett. 109, 032106 (2016).
7. Fabrication of InGaN thin-film transistors using pulsed sputtering deposition
   Takeki Itoh, Atsushi Kobayashi, Kohei Ueno, Jitsuo Ohta, and Hiroshi Fujioka
   Scientific Reports 6, 29500, (2016).
8. Epitaxial growth of GaN films on nearly lattice-matched hafnium substrates using a low-temperature growth technique
   H. R. Kim, J. Ohta, S. Inoue, K. Ueno, A. Kobayashi, and H. Fujioka
   APL Materials 4, 076104 (2016).